Search results for "Distribution theory"
showing 5 items of 5 documents
EFFECT OF A FLUCTUATING ELECTRIC FIELD ON ELECTRON SPIN DEPHASING TIME IN III–V SEMICONDUCTORS
2012
We investigate the electron spin dephasing in low n-doped GaAs semiconductor bulks driven by a correlated fluctuating electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation times are computed through the D’yakonov–Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. The decay of initial spin polarization of conduction electrons is calculated for different values of field strength, noise intensity and noise correlation time. For values of noise correlation time compara…
Experimental validation of a distribution theory based analysis of the effect of manufacturing tolerances on permanent magnet synchronous machines
2017
An experimental study on the effect of permanent magnet tolerances on the performances of a Tubular Linear Ferrite Motor is presented in this paper. The performances that have been investigated are: cogging force, end effect cogging force and generated thrust. It is demonstrated that: 1) the statistical variability of the magnets introduces harmonics in the spectrum of the cogging force; 2) the value of the end effect cogging force is directly linked to the values of then remanence field of the external magnets placed on the slider; 3) the generated thrust and its statistical distribution depend on the remanence field of the magnets placed on the translator.
New insights into electron spin dynamics in the presence of correlated noise
2011
The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin depolarization is studied by examinating the decay of the initial spin polarization of the conduction electrons through the D'yakonov-Perel process, the only relevant relaxation mechanism in III-V crystals. Our results show that, f…
Effect of a fluctuating electric field on electron spin dephasing in III-V semiconductors
2011
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor bulks driven by a static electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation lengths are computed through the D’yakonov-Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. Since semiconductor based devices are always imbedded into a noisy environment that can strongly affect their performance, the decay of initial spin polarization of conduction electrons is calculat…
The exact distribution of a weighted Convolution of two Gamma distributions
2006
Si considera una rappresentazione della funzione di densit`a di probabilit`a di una Convoluzione ponderata di distribuzioni Gamma, in cui una funzione ipergeometrica confluente descrive come le differenze tra i parametri di scala delle componenti determinino allontanamenti da una densit`a Gamma. Si considera il caso specifico di una convoluzione di due variabili gamma per mostrare, come al vantaggio interpretativo si aggiunga la possibilit`a di derivare in forma esplicita e computazionalmente semplice, espressioni della funzione di ripartizione e dei momenti. Si mostra la relazione tra tale distribuzione ed il sistema delle distribuzioni di Bessel, e si generalizza inoltre al caso di convol…